发明名称 |
Low Temperature High Strength Metal Stack for Die Attachment |
摘要 |
A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent. |
申请公布号 |
US2012211793(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201213361569 |
申请日期 |
2012.01.30 |
申请人 |
BERGMANN MICHAEL JOHN;WILLIAMS CHRISTOPHER D.;SCHNEIDER KEVIN SHAWNE;HABERERN KEVIN;DONOFRLO MATTHEW |
发明人 |
BERGMANN MICHAEL JOHN;WILLIAMS CHRISTOPHER D.;SCHNEIDER KEVIN SHAWNE;HABERERN KEVIN;DONOFRLO MATTHEW |
分类号 |
H01L33/62 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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