发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber. |
申请公布号 |
US2012214317(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201213399558 |
申请日期 |
2012.02.17 |
申请人 |
MUROBAYASHI MASAKI;YAMAGUCHI TAKATOMO;SHIRAKO KENJI;SAIDO SHUHEI;SATO AKIHIRO;IMAI YOSHINORI;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MUROBAYASHI MASAKI;YAMAGUCHI TAKATOMO;SHIRAKO KENJI;SAIDO SHUHEI;SATO AKIHIRO;IMAI YOSHINORI |
分类号 |
H01L21/31;C23C16/455;C23C16/52 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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