发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.
申请公布号 US2012214317(A1) 申请公布日期 2012.08.23
申请号 US201213399558 申请日期 2012.02.17
申请人 MUROBAYASHI MASAKI;YAMAGUCHI TAKATOMO;SHIRAKO KENJI;SAIDO SHUHEI;SATO AKIHIRO;IMAI YOSHINORI;HITACHI KOKUSAI ELECTRIC INC. 发明人 MUROBAYASHI MASAKI;YAMAGUCHI TAKATOMO;SHIRAKO KENJI;SAIDO SHUHEI;SATO AKIHIRO;IMAI YOSHINORI
分类号 H01L21/31;C23C16/455;C23C16/52 主分类号 H01L21/31
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