发明名称 |
Method for Forming Semiconductor Substrate Isolation |
摘要 |
The present invention provides a method for forming a semiconductor substrate isolation, comprising: providing a semiconductor substrate; forming a first oxide layer and a nitride layer sequentially on the semiconductor substrate; forming openings in the nitride layer and in the first oxide layer to expose parts of the semiconductor substrate; implanting oxygen ions into the semiconductor substrate from the openings; performing annealing to form a second oxide layer on at least top portions of the exposed parts of the semiconductor substrate; and removing the nitride layer and the first oxide layer. Compared to the conventional STI process, said method enables a more simply and easy process flow and is applicable to common semiconductor substrates and SOI substrates. |
申请公布号 |
US2012214289(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201113202606 |
申请日期 |
2011.04.08 |
申请人 |
YIN HAIZHOU;LUO ZHIJIONG;ZHU HUILONG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
YIN HAIZHOU;LUO ZHIJIONG;ZHU HUILONG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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