LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a light-emitting diode and a method for manufacturing same. The light-emitting diode of the present invention comprises: a p-type electrode formed on a conductive substrate; a p-type nitride semiconductor layer formed on the p-type electrode; an active layer formed on the p-type nitride semiconductor; an n-type nitride semiconductor layer formed on the active layer; and an n-type electrode formed on the n-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer has formed on some areas thereof a concavo-convex portion, the n-type electrode is formed on the convex portion of the concavo-convex portion formed on the n-type nitride semiconductor layer, and the concave portion of the concavo-convex portion formed on the n-type nitride semiconductor layer is filled with a fluorescent body. The present invention provides a light-emitting diode having a novel structure that can significantly increase the coating area of the fluorescent body and the fluorescence conversion efficiency, and a method for manufacturing same.