| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device achieving an increase in capacity of a capacitive element. <P>SOLUTION: A semiconductor device comprises: a substrate (semiconductor substrate 1); a multilayer wiring layer formed on the semiconductor substrate 1, in which a plurality of wiring layers each including wiring and an insulation layer are laminated; a storage circuit 200 formed on a storage circuit region in the semiconductor substrate 1 when viewed from above, and having at least one capacitive element 19 embedded in a recess 40 provided in the multilayer wiring layer, and peripheral circuits; a logical circuit 100 formed in a logical circuit region different from the storage circuit region in the semiconductor substrate 1 when viewed from above; upper connection wiring 18 laminated on the capacitive element 19 including a lower electrode 14, a capacitance insulation film 15 and an upper electrode 16 in the recess 40; and a cap layer 6c provided so as to contact a top face of wiring 8b included in the logical circuit 100 provided in the top layer among wiring layers in which the capacitive element 19 is embedded. A top face 30 of the upper connection wiring 18 and a top face 34 of the cap layer 6c are the same in level. <P>COPYRIGHT: (C)2012,JPO&INPIT |
