| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for reducing, by means of lower-temperature and short-time processing, defects generated on a surface of and inside a monocrystalline silicon layer by a lamination method. <P>SOLUTION: A method for manufacturing an SOI wafer comprises steps of: forming a monocrystalline silicon layer on a handle substrate selected among materials having a heatproof temperature of 800°C or higher by a lamination method to obtain a laminated substrate; depositing amorphous silicon on the monocrystalline silicon layer of the laminated substrate; and applying heat treatment on the resultant substrate at 800°C or higher. <P>COPYRIGHT: (C)2012,JPO&INPIT |
