发明名称 |
SUBSTRATE FILM AND METHOD FOR MANUFACTURING SAME |
摘要 |
The present invention relates to a substrate film and a method for manufacturing the substrate film. The present invention provides a substrate film displaying excellent heat resistance and dimensional stability, and the substrate film has excellent stress relaxivity, enabling prevention of breakage of a wafer due to residual stress, suppression of damage or splash on the wafer due to uneven impression of pressure during wafer processing, and excellent cuttability. Therefore, the substrate film of the present invention can be used effectively as a processing sheet in various wafer processing including dicing, back grinding, or pick-up. |
申请公布号 |
WO2012111963(A2) |
申请公布日期 |
2012.08.23 |
申请号 |
WO2012KR01111 |
申请日期 |
2012.02.14 |
申请人 |
LG CHEM, LTD.;JOO, HYO SOOK;KIM, SE RA;SHIM, JUNG SUP;CHANG, SUK KY |
发明人 |
JOO, HYO SOOK;KIM, SE RA;SHIM, JUNG SUP;CHANG, SUK KY |
分类号 |
C08J5/18;C08F20/18;C08L33/06;C09J7/02;H01L21/48 |
主分类号 |
C08J5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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