发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method which manufactures a more reliable semiconductor device. <P>SOLUTION: In a manufacturing method of a semiconductor device according to the embodiment, a substrate, in which circuit boards having an insulation substrate, multiple first wiring layers, multiple second wiring layers and multiple vias are continuously provided, is prepared. Semiconductor elements are respectively mounted on the multiple circuit boards, and a sealing resin layer sealing the semiconductor elements and the multiple first wiring layers is formed on an upper surface of the substrate. A lower surface of the substrate is contacted with a ground and the sealing resin layer and the circuit boards are respectively singulated. Further, grooves are formed on the ground between the singulated circuit boards. An upper surface of the respective sealing resin layers are covered by a conductive shield layer and side surfaces of the respective sealing resin layers and at least parts of side surfaces of the respective circuit boards are covered by the conductive shield layer. The conductive shield layer is inserted into a space between the singulated circuit boards in a direction that proceeds from the sealing resin layer to the groove. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012160577(A) 申请公布日期 2012.08.23
申请号 JP20110019272 申请日期 2011.01.31
申请人 TOSHIBA CORP 发明人 FUKUMITSU MASAKO;IGUCHI TOMOHIRO;HONDA TOMOKO;HONDA SATOSHI;YAMAMOTO KAZUICHI
分类号 H01L21/56;H01L23/12;H01L23/28 主分类号 H01L21/56
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