发明名称 SUBSTRATE SURFACE PLANARIZATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To selectively etch even a concave part with such a size that etching with proximity field lights is difficult, by radiation of lights. <P>SOLUTION: In this substrate surface planarization method, a concave part formed on a surface of a substrate is etched. A resist 5 is coated on a surface 2a of a substrate 2 to expose a convex part 3. Then, propagation lights with longer wavelength than absorption edge wavelength of a gas molecule 6 of etching gas are radiated on the substrate 2 in an etching gas atmosphere. At that time, on the surface of an exposure part 4 of the convex part 2 exposed from the resist 5, the gas molecules 6 are dissociated by the radiated propagation lights through a heat insulation process, so as to etch the exposure part 4. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012160487(A) 申请公布日期 2012.08.23
申请号 JP20110017123 申请日期 2011.01.28
申请人 RESEARCH INSTITUTE OF NANOPHOTONICS 发明人 SUGIMORI TERUHIKO
分类号 H01L21/3065 主分类号 H01L21/3065
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