| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon electrode plate for plasma etching, which suppresses surface irregularities caused by plasma etching to allow uniform etching. <P>SOLUTION: The silicon electrode plate for plasma etching is made of single crystal silicon to which B and Al have been added as dopants, and a concentration of Al is 1×10<SP POS="POST">13</SP>atoms/cm<SP POS="POST">3</SP>or more. In the silicon electrode plate for plasma etching, electrical characteristics of the single crystal silicon are uniformized in a plane. Therefore, when a surface of the silicon electrode plate for plasma etching is worn in plasma etching, irregularities can be extremely reduced, and cracking can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
