发明名称 Integrated Circuit with Sensor and Method of Manufacturing Such an Integrated Circuit
摘要 Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20); a passivation stack (24, 26, 28) covering the metallization stack; and a sensor including a sensing material (40) on the passivation stack, said sensor being coupled to the first metal portion by a via (34) extending through the passivation stack. A method of manufacturing such an IC is also disclosed.
申请公布号 US2012211845(A1) 申请公布日期 2012.08.23
申请号 US201213398158 申请日期 2012.02.16
申请人 NXP B.V. 发明人 DAAMEN ROEL;WOLTERS ROBERTUS ADRIANUS MARIA;RONGEN RENE THEODORA HUBERTUS;PONOMAREV YOURI VICTOROVITCH
分类号 H01L29/66;H01L21/02 主分类号 H01L29/66
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