发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPLIANCE |
摘要 |
Provided are a semiconductor device with less leakage current is reduced, a semiconductor device with both of high field effect mobility and low leakage current, an electronic appliance with low power consumption, and a manufacturing method of a semiconductor device in which leakage current can be reduced without an increase in the number of masks. The side surface of a semiconductor layer formed of a semiconductor film having high carrier mobility is not in contact with any of a source electrode and a drain electrode. Further, such a transistor structure is formed without an increase in the number of photomasks and can be applied to an electronic appliance.
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申请公布号 |
US2012211809(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201213397705 |
申请日期 |
2012.02.16 |
申请人 |
TANAKA TETSUHIRO;TOKUMARU RYO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA TETSUHIRO;TOKUMARU RYO |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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