发明名称 METHOD AND DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON
摘要 <p>A device for obtaining multicrystalline silicon, including: at least one crucible, removably housed in a cup-shaped graphite container; a fluid-tight casing, including a fixed bottom half-shell and a vertically mobile top half-shell; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil and a bottom induction coil vertically mobile for varying the distance from the bottom wall; and means for a.c. electrical supply of the induction coils separately from one another; at least the lateral induction coil includes a plurality of plane turns set on top of one another, and means for selectively short-circuiting, supplying or not supplying the turns, all together or separately one or more at a time and for varying the frequency of supply thereof all together or separately one or more at a time.</p>
申请公布号 KR20120093968(A) 申请公布日期 2012.08.23
申请号 KR20127012944 申请日期 2010.10.20
申请人 SAET S.P.A. 发明人 DUGHIERO FABRIZIO;FORZAN MICHELE;CISCATO DARIO;CESANO MARIOLINO;CRIVELLO FABRIZIO;BERNABINI PAOLO
分类号 C30B11/00;B22D27/04;C30B29/06;F27B14/14 主分类号 C30B11/00
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