| 摘要 |
A field effect transistor includes a source wiring that is formed on a compound semiconductor substrate, and has a plurality of source electrodes arranged in parallel to each other at predetermined intervals, a drain wiring that is formed on the compound semiconductor substrate, and has a plurality of drain electrodes arranged in parallel to each other at predetermined intervals and alternatively disposed in a parallel direction of the plurality of source electrodes, a gate wiring that is formed on the compound semiconductor substrate, and has a portion located between the source electrode and the drain electrode which are adjacent to each other at least in the parallel direction, and a plurality of buried gate layers that is formed under the gate wiring in a region in which the gate wiring is formed, and is independently provided between each electrode of the source electrodes and the drain electrodes. |
