| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a pattern obtained by development is thermally deformed so as to stably correct fine roughness in the resist pattern feature within such a range that the line width of the pattern is not changed by over 10%. <P>SOLUTION: A method for forming a resist pattern includes steps of: obtaining a resist film of a positive chemically amplified resist composition; subjecting the resist film to pattern exposure; developing the pattern; and correcting a pattern feature by heating in such a range that the line width of the pattern obtained by development is not changed by over 10%. The positive chemically amplified resist composition comprises: (A) a resin which includes an acidic functional group protected by an acid-labile group, and which is alkali-insoluble or hardly soluble with alkali and changed into alkali-soluble when the acid-labile group leaves; (B) an acid generator; and (C) a compound containing nitrogen as a basic component. The composition contains a softening accelerator by 2.5 to 20 mass%, which has an acidic functional group protected by an acid-labile group and has a molecular weight of 800 or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
