| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device capable of expanding a range of a low voltage operation, which stably enables proper read operation from a memory cell. <P>SOLUTION: A memory device includes a memory part adapted to output a read current in response to data stored in a nonvolatile FET-type memory cell, a reference current generating part adapted to generate a reference current, and a current comparing part adapted to compare magnitude of the read current with that of the reference current to output the comparison result. The memory part includes boosting means for boosting a power-supply voltage to generate a boost voltage, and outputs the read current by applying the boost voltage as a gate voltage of the memory cell when reading the data. The reference current generating part includes a differential amplifier configured such that a voltage in accordance with the boost voltage is applied to one input terminal thereof, feedback means for applying a voltage in accordance with an output voltage of the differential amplifier to the other input terminal of the differential amplifier, and current outputting means for generating the reference current in accordance with the output voltage of the differential amplifier. <P>COPYRIGHT: (C)2012,JPO&INPIT |
