| 发明名称 |
LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION |
| 摘要 |
An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000. |
| 申请公布号 |
US2012210932(A1) |
申请公布日期 |
2012.08.23 |
| 申请号 |
US201113032866 |
申请日期 |
2011.02.23 |
| 申请人 |
HEKMATSHOAR-TABARI BAHMAN;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEKMATSHOAR-TABARI BAHMAN;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
| 分类号 |
C30B25/02;C30B25/10 |
主分类号 |
C30B25/02 |
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