发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved. |
申请公布号 |
KR20120093327(A) |
申请公布日期 |
2012.08.22 |
申请号 |
KR20127014502 |
申请日期 |
2010.10.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ICHIJO MITSUHIRO;TANAKA TETSUHIRO;YASUMOTO SEIJI;MASHIRO SHUN;OIKAWA YOSHIAKI;OKAZAKI KENICHI |
分类号 |
H01L21/336;H01L21/316;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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