Light emitting device and method for manufacturing the same

摘要

Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer (25); an active layer (27) on the n-type semiconductor layer (25), an AlN/GaN layer of a super lattice structure (28) formed by alternately growing an AlN layer and a GaN layer on the active layer (27), and a p-type nitride semiconductor layer (29) on the AlN/GaN layer of the super lattice structure (28). At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.