| 摘要 |
PURPOSE: A gate of a semiconductor device having a nano particle of a columnar structure and a manufacturing method thereof are provided to increase conductivity by forming a poly-silicon layer of a columnar nano structure instead of an amorphous poly-silicon layer. CONSTITUTION: A gate oxidation film(210) is formed on a semiconductor substrate(200). A columnar nano doped poly-silicon film(220) of nano grain size is formed on the gate oxidation film. An undoped poly-silicon film(230) of a columnar nano structure is formed on the columnar nano doped poly-silicon film. A semiconductor substrate in which the undoped poly-silicon film of the columnar nano structure is formed is heat-treated. A gate electrode is formed by patterning the undoped poly-silicon film of the columnar nano structure, the columnar nano doped poly-silicon film, and a gate insulating film.
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