METHOD FOR FABRICATING A DUAL POLYGATE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A dual-poly gate formation method of a semiconductor device is provided to reduce electrical deterioration due to lattice defects induced within a silicon lattice using silicon which is same material with the silicon within a poly-silicon layer. CONSTITUTION: A gate insulating layer and a poly-silicon layer(110) are formed on a semiconductor substrate(100) having a first area(A) and a second area(B). The poly-silicon layer of the second area is exposed. A first ion injection process which makes the poly-silicon layer of the second area amorphous is executed. A second ion injection process which dopes impurities of second conductive type on the poly-silicon layer of the second area is executed. Impurities of the first area and the second area are activated by heat-treating the semiconductor substrate.