| 摘要 |
<p>PURPOSE: A method for revising the defect of an absorber pattern of an extreme ultraviolet radiation mask is provided to control damage of the absorber pattern which is regenerated by mechanical pressure and chemical reaction at the subsequent process. CONSTITUTION: A reflecting layer(220) consisting of an Mo/Si multi-layered structure is formed on a substrate(210). A capping layer(230) is formed on the reflecting layer. An absorber pattern(240) exposing a partial surface of the capping layer is formed on the capping layer. A trench(300) is formed by selectively etching a defected region in which the absorber pattern disappears. A revised absorber pattern(242) is formed by filling inside the trench with material of extreme ultraviolet radiation light absorptiveness.</p> |
