METHOD FOR MEASURING ROTATION ANGLE OF BONDED WAFER

摘要

The present invention provides a method for measuring a rotation angle of a bonded wafer, characterized in that a base wafer 1 and a bond wafer 2 each having a notch 1N or 2N indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile 2R of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer 10 manufactured by reducing a film thickness of the bond wafer 2, a positional direction of the notch 2N of the bond wafer seen from a center C of the bonded wafer is calculated by utilizing the profile 2R, an angle formed between the calculated positional direction of the notch 2N of the bond wafer and a positional direction 1N of the notch of the base wafer is calculated, and a rotation angle of the base wafer 1 and the bond wafer 2 is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided.