METHOD FOR MANUFACTURING LIGHT EMITTING DIODE COMPRISING ZNO ANTI-REFLECTIVE COATING AND LIGHT EMITTING DIODE COMPRISING ZNO ANTI-REFLECTIVE COATING PREPARED BY USING THE METHOD

摘要

PURPOSE: A method for manufacturing a light emitting diode comprising a Zno(Zinc Oxide) reflection preventing layer and a light emitting diode comprising including the Zno reflection preventing layer manufactured by the same are provided to reduce fresnel reflection between a transparent electrode and the outside and improve optical power by growing the Zno reflection preventing layer of two layered structure on the transparent electrode. CONSTITUTION: An n-type semiconductor layer(20) is formed on a substrate(10). An active layer(30) is formed on the n-type semiconductor layer. A p-type semiconductor layer(40) is formed on the active layer. A transparent electrode(50) is formed on the p-type semiconductor layer. A p-type electrode(70) is formed on the transparent electrode.