Method of forming a memory cell that employs a selectively deposited reversible resistance-switching element

摘要

In some aspects, a method of forming a memory cell is provided that includes forming a first conductor above a substrate; forming a diode above the first conductor; forming a reversible resistance-switching element above the first conductor using a selective deposition process; and forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.