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发明名称
多晶片封装结构及其制造方法
摘要
一种多晶片封装结构,其中封装基板具有一第一表面、一相对之第二表面、以及一贯孔贯穿第一表面及第二表面。第一晶片以覆晶方式设置于封装基板之第一表面,并与封装基板形成一第一间隙;第二晶片以覆晶方式设置于封装基板之第二表面,并与封装基板形成一第二间隙,其中贯孔系设置于封装基板对应于第一晶片及第二晶片之间的区域中。底部填充材料填满第一间隙、第二间隙及贯孔。本发明之封装技术可一次填充底部填充材料于封装基板之上下表面与晶片之间的间隙,以增加封装之效率。本发明亦揭示一种多晶片封装结构之制造方法。
申请公布号
TWI371096
申请公布日期
2012.08.21
申请号
TW097147901
申请日期
2008.12.09
申请人
力成科技股份有限公司 新竹县湖口乡新竹工业区大同路26号
发明人
吴智伟
分类号
H01L23/492;H01L21/54
主分类号
H01L23/492
代理机构
代理人
蔡朝安 新竹市科学工业园区力行一路1号E之1
主权项
地址
新竹县湖口乡新竹工业区大同路26号
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