发明名称 |
Source bias shift for multilevel memories |
摘要 |
The threshold voltage range of a multilevel memory cell may be increased without using a negative voltage pump. In one embodiment, an added positive voltage may be applied to the source of the selected cell. A boost voltage may be applied to the output of a sense amplifier. Non-ideal characteristics of a buffer that supplies the voltage to the selected cell may be compensated for in some embodiments. |
申请公布号 |
US8248862(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20090636896 |
申请日期 |
2009.12.14 |
申请人 |
DI IORIO ERCOLE ROSARIO;MAROTTA GIULIO GIUSEPPE;TIBURZI MARCO DOMENICO;KALAVADE PRANAV |
发明人 |
DI IORIO ERCOLE ROSARIO;MAROTTA GIULIO GIUSEPPE;TIBURZI MARCO DOMENICO;KALAVADE PRANAV |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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