发明名称 SUBSTRATE TREATING APPARATUS AND METHOD
摘要 PURPOSE: An apparatus and method for processing a substrate are provided to uniformly maintain a temperature of the substrate by correcting a temperature deviation according to an area of the substrate. CONSTITUTION: A processing chamber(110) provides a space to process a substrate and includes a body(120) and a sealing cover(130). The sealing cover seals the inside of the body from the outside by covering an opened upper side of the body. The upper side of the sealing cover is combined with a plasma supply unit(200). An inlet and an induction space to provide plasma to a baffle(190) are formed in the sealing cover. The substrate is loaded on a susceptor(140). A heater(150) heats the susceptor. Temperatures sensors measure temperatures in a first region and a second region of the susceptor. A temperature control member analyzes temperature data and corrects a temperature difference between the first region and the second region.
申请公布号 KR20120092473(A) 申请公布日期 2012.08.21
申请号 KR20110012560 申请日期 2011.02.11
申请人 PSK INC. 发明人 HAN, WOO RYONG
分类号 H01L21/683;H01L21/3065 主分类号 H01L21/683
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