发明名称 |
Nickel tin bonding system with barrier layer for semiconductor wafers and devices |
摘要 |
A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer. |
申请公布号 |
US8247836(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US201113035005 |
申请日期 |
2011.02.25 |
申请人 |
DONOFRIO MATTHEW;SLATER, JR. DAVID B.;EDMOND JOHN A.;KONG HUA-SHUANG;CREE, INC. |
发明人 |
DONOFRIO MATTHEW;SLATER, JR. DAVID B.;EDMOND JOHN A.;KONG HUA-SHUANG |
分类号 |
H01L33/00;H01L23/48;H01L23/52;H01L29/40;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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