发明名称 Redundancy circuits and semiconductor memory devices
摘要 A redundancy circuit includes at least one fuse set circuit and a fuse control circuit. The at least one fuse set circuit includes a plurality of fuse cells, each of the plurality of fuse cells having a first transistor and a second transistor having same sizes. The first transistor has a first contact resistance and the second transistor has a second contact resistance different from the first contact resistance. Each of the plurality of fuse cells stores a fuse address indicating a defective cell in a repair operation and outputs a repair address corresponding to the stored fuse address. The fuse control circuit, connected to the plurality of fuse cells, controls the plurality of fuse cells in response to a program signal and a precharge signal such that the corresponding fuse address is stored in each of the fuse cells.
申请公布号 US8248871(B2) 申请公布日期 2012.08.21
申请号 US20100662644 申请日期 2010.04.27
申请人 PARK DUK-HA;SONG KI-WHAN;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK DUK-HA;SONG KI-WHAN
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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