| 摘要 |
A semiconductor storage device and method of manufacturing same at a lower cost by without forming a photolithographic resist. Second impurity regions are arranged in such a manner that second impurity regions adjacent along the column direction are joined together. A select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction. |
