发明名称 |
ZnO-based thin film and ZnO-based semiconductor element |
摘要 |
Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer 3. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layers 3b and acceptor-doped ZnO layers 3a. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material. |
申请公布号 |
US8247793(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20080664397 |
申请日期 |
2008.06.13 |
申请人 |
NAKAHARA KEN;AKASAKA SHUNSUKE;KAWASAKI MASASHI;OHTOMO AKIRA;TSUKAZAKI ATSUSHI;ROHM CO., LTD. |
发明人 |
NAKAHARA KEN;AKASAKA SHUNSUKE;KAWASAKI MASASHI;OHTOMO AKIRA;TSUKAZAKI ATSUSHI |
分类号 |
H01L29/06;H01L29/08;H01L29/10;H01L29/12;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L33/04;H01L33/28 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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