| 摘要 |
<p>PURPOSE: A passivation layer for semiconductor device packaging is provided to protect a copper layer on a semiconductor device or the surface of a copper bonding pad by eliminating an oxide layer using plasma. CONSTITUTION: A vacuum pump(16) exhausts an operating process space(14) of a process chamber(12) through a valve vacuum port(18). The vacuum pump comprises one or more vacuum pumping devices having a controllable pumping speed. A power supply unit(28) is electrically combined with an antenna(30) located inside the process chamber. Electricity transferred to a bias electrode(34) from the power supply unit is used for catalyzing plasma processing of a substrate(24). A gate valve is arranged between the operating space and the vacuum pump.</p> |
