发明名称 Active matrix display device including a metal oxide semiconductor film
摘要 The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
申请公布号 US8247814(B2) 申请公布日期 2012.08.21
申请号 US201113104011 申请日期 2011.05.09
申请人 MAEKAWA SHINJI;KUWABARA HIDEAKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MAEKAWA SHINJI;KUWABARA HIDEAKI
分类号 H01L29/10 主分类号 H01L29/10
代理机构 代理人
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