| 摘要 |
A semiconductor memory device comprises a memory cell array and a sense amplifier circuit. The memory cell array includes a first NMOS transistor which has a gate electrode connected to a word line and has one source/drain region connected to a bit line. The sense amplifier circuit includes a second NMOS transistor which has a gate electrode connected to the bit line and has one source/drain region connected to a predetermined voltage. In the semiconductor memory device, each of the first and second MOS transistors is a floating body type NMOS transistor, and the predetermined voltage is supplied to the bit line at least in a precharge operation, thereby preventing characteristic deterioration due to accumulation of holes in the floating body. |
