发明名称 Semiconductor memory apparatus and probe test control circuit therefor
摘要 Disclosed probe test control circuit includes: a bank active circuit configured to generate a bank active signal in response to a bank address and bank-by-bank test control signals; and a mat active circuit configured to generate a mat-by-mat sub-wordline selection signal and provide the mat-by-mat sub-wordline selection signal to a selected memory bank, in response to a row address signal, a row address enable signal and a mat-by-mat test control signal.
申请公布号 US8248874(B2) 申请公布日期 2012.08.21
申请号 US20090642429 申请日期 2009.12.18
申请人 AN SUN MO;SK HYNIX INC. 发明人 AN SUN MO
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址