发明名称 |
Semiconductor device and manufacturing method thereof, delamination method, and transferring method |
摘要 |
A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward. A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed. |
申请公布号 |
US8247246(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20100766318 |
申请日期 |
2010.04.23 |
申请人 |
MARUYAMA JUNYA;TAKAYAMA TORU;OHNO YUMIKO;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MARUYAMA JUNYA;TAKAYAMA TORU;OHNO YUMIKO;YAMAZAKI SHUNPEI |
分类号 |
G02F1/1333;H01L21/30;G02F1/136;G02F1/1368;G09F9/30;H01L21/00;H01L21/02;H01L21/336;H01L21/68;H01L21/77;H01L21/84;H01L27/12;H01L29/76;H01L29/786;H01L31/18 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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