发明名称 METHOD OF CLEANING AND FORMING A NEGATIVELY CHARGED PASSIVATION LAYER OVER A DOPED REGION
摘要 <p>The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.</p>
申请公布号 KR20120092184(A) 申请公布日期 2012.08.20
申请号 KR20127017830 申请日期 2010.12.07
申请人 APPLIED MATERIALS, INC. 发明人 STEWART MICHAEL P.;ZHOU LIZHONG;SHU JEN Y.;XU LI (SHERRY)
分类号 H01L31/042;H01L31/0216;H01L31/18 主分类号 H01L31/042
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