发明名称 |
METHOD OF CLEANING AND FORMING A NEGATIVELY CHARGED PASSIVATION LAYER OVER A DOPED REGION |
摘要 |
<p>The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.</p> |
申请公布号 |
KR20120092184(A) |
申请公布日期 |
2012.08.20 |
申请号 |
KR20127017830 |
申请日期 |
2010.12.07 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
STEWART MICHAEL P.;ZHOU LIZHONG;SHU JEN Y.;XU LI (SHERRY) |
分类号 |
H01L31/042;H01L31/0216;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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