发明名称 A CHEMICAL VAPOR DEPOSITION APPARATUS AND A GAS SUPPLYING UNIT THEREOF
摘要 PURPOSE: A chemical vapor deposition apparatus and a gas supplying unit thereof are provided to enhance the quality of deposited thin films because the temperature of growth environments is accurately controlled by detecting the temperature of a susceptor or a substrate with an optical pyrometer. CONSTITUTION: A chemical vapor deposition apparatus comprises a chamber, a susceptor(20), a process gas supplying part(110), an insertion pipe(120), a sensing pipe(140), a temperature sensing member(150), and a sealing member(160). The susceptor is installed inside the chamber. A substrate is placed on the susceptor. The process gas supplying part is located at the top of the susceptor to supply process gas. The insertion pipe is vertically installed inside the process gas supplying part. The sensing pipe is installed inside the insertion pipe and the upper end thereof is extended to the top of the process gas supplying part. The temperature sensing member measures the temperature of the susceptor or the substrate through the sensing pipe. The sealing member seals a space between the sensing pipe and the insertion pipe.
申请公布号 KR20120091586(A) 申请公布日期 2012.08.20
申请号 KR20110011443 申请日期 2011.02.09
申请人 LIGADP CO., LTD. 发明人 LEE, CHANG YEOB
分类号 C23C16/455;C23C16/44 主分类号 C23C16/455
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