FABRICATING METHOD OF NON VOLATILE MEMORY DEVICE AND NON VOLATILE MEMORY DEVICE THEREBY

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device is provided to remove an air gap filling process in a part of an area by selectively forming an air gap in a first area. CONSTITUTION: A substrate with a first region and a second region is provided. A first dielectric layer(120) and a charge storage floating pattern(130) are successively laminated on the substrate. A plurality of trenches(105) is filled with first insulation materials. A first recess is formed in the first area by removing the first insulation materials of the first area. A second insulation material(160) is formed on the upper side of the first recess. An air gap(110) is formed on the lower side of the first recess by removing sacrificial materials.