| 摘要 |
<p>PURPOSE: A resist material and a pattern forming method using the same are provided to improve the shape of pattern after exposure and to improve sensitivity and resolution. CONSTITUTION: A resist material includes a polymeric compound which is obtained by copolymerizing a first repeating unit(a1) of acid labile group substituted (meta)acrylate, styrene carboxylic acid, or vinyl naphthalene carboxylic acid, and/or a second repeating unit(a2) containing acid labile group substituted phenolic hydroxyl group, and a third repeating unit(b1) of (meta)acrylate of magnesium, copper, zinc, or cesium or the salts of styrene carboxylic acid or vinyl naphthalene carboxylic acid. The polymeric compound is represented by chemical formula 1.</p> |
