METHOD FOR MODELING OF CHARGE TRAPPING AND RELEASE INDUCED THRESHOLD VOLTAGE SHIFT IN THIN FILM TRANSISTOR

摘要

PURPOSE: A method for modeling a threshold voltage shift by trapping and discharging charges in a thin film transistor is provided to improve the reliability of an operation simulation result of a circuit by estimating the threshold voltage shift of a transistor based on the trap and discharge of a charge carrier. CONSTITUTION: An interface on a semiconductor and a dielectric interface are displayed(112). A localized state or trap state on a dielectric layer is displayed(113). An interface on the semiconductor and a protection interface are displayed(114). A localized state or trap state on a protection layer is displayed(115). A conduction band is displayed to show an electron transfer band(131). A gate electrode state is displayed(135).