发明名称 |
SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE |
摘要 |
<p>PURPOSE: A solid state image pickup device and a manufacturing method thereof are provided to suppress delamination or crack of a high refractive member by removing a part of an insulation layer to reduce stress. CONSTITUTION: Four photo diodes(101-104) converts incident light into charges according to the intensity of the incident light. A first transmission transistor(105) transmits charges generated from a first photo diode to a FD node(109). A second transmission transistor(106) transmits charges generated from a second photo diode to the FD node. A third transmission transistor(107) transmits charges generated from a third photo diode to the FD node. A fourth transmission transistor(108) transmits charges generated from a fourth photo diode to the FD node.</p> |
申请公布号 |
KR20120092021(A) |
申请公布日期 |
2012.08.20 |
申请号 |
KR20120010273 |
申请日期 |
2012.02.01 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAWAYAMA TADASHI;IKAKURA HIROSHI;KONDO TAKAHARU;ETO TORU |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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