发明名称 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE
摘要 <p>PURPOSE: A solid state image pickup device and a manufacturing method thereof are provided to suppress delamination or crack of a high refractive member by removing a part of an insulation layer to reduce stress. CONSTITUTION: Four photo diodes(101-104) converts incident light into charges according to the intensity of the incident light. A first transmission transistor(105) transmits charges generated from a first photo diode to a FD node(109). A second transmission transistor(106) transmits charges generated from a second photo diode to the FD node. A third transmission transistor(107) transmits charges generated from a third photo diode to the FD node. A fourth transmission transistor(108) transmits charges generated from a fourth photo diode to the FD node.</p>
申请公布号 KR20120092021(A) 申请公布日期 2012.08.20
申请号 KR20120010273 申请日期 2012.02.01
申请人 CANON KABUSHIKI KAISHA 发明人 SAWAYAMA TADASHI;IKAKURA HIROSHI;KONDO TAKAHARU;ETO TORU
分类号 H01L27/146 主分类号 H01L27/146
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