| 摘要 |
PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve the quality of an epitaxial layer by growing an epitaxial layer on sapphire powder. CONSTITUTION: An epitaxial layer(120) is formed on a substrate(110). The upper side of the substrate is made of materials to grow a nitride layer with a lattice type. The epitaxial layer includes a buffer layer(121), an n type nitride layer(122), an active layer(123), and a p type nitride layer(124). A p type electrode pad(130) is formed on the upper side of the p type nitride layer. An n type electrode pad(140) is formed on the upper side of an n type nitride layer.
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