发明名称 3-D INTEGRATED CIRCUIT LATERAL HEAT DISSIPATION
摘要 FIELD: physics. ^ SUBSTANCE: three-dimensional integrated circuit device has a first chip which is laid on a second chip to form a layered structure, each of the chips having elements constructed therein, and the chips are connected to each other by a plurality of interlayer connections which form space between the first and second chips. The device also has a through-hole through the substrate, filled with heat-conducting material, which is located in the first chip. The second chip has a heat-conducting layer, wherein the heat-conducting layer provides a physical interconnection between the second chip and the through-hole through the substrate located in the first chip. ^ EFFECT: improved removal of heat from problem areas of a three-dimensional integrated circuit device. ^ 14 cl, 4 dwg
申请公布号 RU2459315(C1) 申请公布日期 2012.08.20
申请号 RU20100149596 申请日期 2009.04.27
申请人 KVEHLKOMM INKORPOREJTED 发明人 KASKUN KENNET;GU SHITSJUN';NOVAK MEHTT'JU M.
分类号 H01L23/36;H01L25/065 主分类号 H01L23/36
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