| 摘要 |
An object of the present invention is to obtain stable growth of SiC single crystals, particularly 4H-SiC single crystals with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000°C or lower. A raw material containing Si, Ti and Ni is charged into a crucible 1 made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible 1 into the solvent to obtain a melt 6. A SiC seed crystal substrate 8 is then brought into contact with the melt 6 such that SiC is supersaturated in the melt 6 in the vicinity of the surface of the SiC seed crystal substrate 8, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate 8. |
