| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the side of an oxide semiconductor layer from being exposed to a vacuum state by heating the oxide semiconductor layer after the sidewall of an oxide semiconductor layer is covered with insulating oxide. CONSTITUTION: A first insulation layer(101) is formed on a substrate(100). A first conductive layer(106) and a second conductive layer(120) are formed on the first insulation layer. A first oxide semiconductor layer is formed on the first insulation layer, the first conductive layer, and the second conductive layer. A second insulation layer(122) covers the first oxide semiconductor layer. A third conductive layer is formed on the second insulation layer.</p> |
