Fabricating epitaxial layer on semiconductor substrate in the fabrication of e.g. Schottky diode, by providing substrate, forming epitaxial layer in contact with seed layer epitaxy process, and adjusting lattice parameters of layers

摘要

The process comprises providing a substrate (1) comprising a support layer (3) and a seed layer (4) that has a first lattice parameter and includes an element of third column and nitrogen, forming an epitaxial layer (2) in contact with the seed layer by an epitaxy process, and adjusting the lattice parameters to equalize the parameters at an epitaxy temperature. A material of the epitaxial layer is different from a material of the seed layer. The epitaxial layer has a second lattice parameter and includes an element of third column and nitrogen. The process comprises providing a substrate (1) comprising a support layer (3) and a seed layer (4) that has a first lattice parameter and includes an element of third column and nitrogen, forming an epitaxial layer (2) in contact with the seed layer by an epitaxy process, and adjusting the lattice parameters to equalize the parameters at an epitaxy temperature. A material of the epitaxial layer is different from a material of the seed layer. The epitaxial layer has a second lattice parameter and includes an element of third column and nitrogen. The adjusting step comprises selecting the material of the support layer so that the layer has a thermal dilation coefficient for rendering through constraint imposed by the support layer on the seed layer during epitaxy process, and adjusting the material of the epitaxial layer so that the material includes an additional element. The first lattice parameter is equal to the second lattice parameter at the epitaxy temperature. The additional element is a dopant element. The process further comprises incorporating the dopant element in the epitaxial layer by doping. The step of adjusting the material of the epitaxial layer comprises selecting the material of the epitaxial layer, where the material is made of an alloy including the additional element, which is a part of the third column. The epitaxial layer is constituted of aluminum-gallium-indium-nitride (Al xGa yIn 1-x-yN), where x and y are = 1. The substrate is obtained by molecular adhesion of the seed layer on the support layer. The seed layer is fabricated: to form an embrittlement zone in a seed substrate by the implantation of ionic species; to contact the seed substrate on the support layer; to transfer the seed layer on the support layer; to detach the epitaxial layer from the substrate; to use the epitaxial layer as a new seed layer for producing a new substrate including a new epitaxial layer. The new epitaxial layer is in contact with the new seed layer having a concentration, which is higher than a concentration of the dopant element of the epitaxial layer. Independent claims are included for: (1) a process for fabricating an electroluminescent diode or Schottky diode; and (2) a semiconductor substrate.