发明名称 |
A GAS SUPPLY UNIT OF A CHEMICAL VAPOR DEPOSITION APPARATUS AND A METHOD FOR MANUFACTURING THEREOF |
摘要 |
PURPOSE: A gas supply unit of a chemical vapor deposition apparatus and a manufacturing method thereof are provided to reduce the generation of fault by eliminating foreign material entered inside a gas chamber. CONSTITUTION: A plurality of first tubes and a plurality of second tubes are installed in order to pass through a first plate and a second plate(S20). A gas chamber is formed by arranging a third plate on the top of the second plate(S30). The bottom surface of the first plate is flattered through cutting or grinding(S50). Foreign material remaining inside the gas chamber is eliminated by forming a water current passing through the gas chamber(S60). A gas chamber is shut tightly by blocking an inlet port and a discharge port(S70).
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申请公布号 |
KR20120090346(A) |
申请公布日期 |
2012.08.17 |
申请号 |
KR20110010719 |
申请日期 |
2011.02.07 |
申请人 |
LIGADP CO., LTD. |
发明人 |
JEONG, JIN YEOL;AN, YOUNG UNG |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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