SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to reduce parasitic capacitance between adjacent bit lines by differently forming the depth of an adjacent bit line. CONSTITUTION: A bit line(102b) is formed on a first insulator(101). A second insulator(103) and a third insulator(104) are formed on the bit line. A first contact plug(105a,105b) is connected to the bit line. A conductive layer(107) is formed on a fourth insulator(106). A groove is formed by etching the conductive layer and the fourth insulator.